this is information on a product in full production. october 2012 doc id 022396 rev 1 1/7 7 STTH2003C-Y automotive high efficiency ultrafast diode datasheet ? production data features high junction temperature combines highest recovery and reverse voltage performance ultrafast, soft and noise-free recovery aec-q101 qualified description this dual center tap rectif ier is suited for switch mode power supplies and high frequency dc to dc converters. packaged in d 2 pak, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive applications. table 1. device summary i f (av) 2 x 10 a v rrm 300 v t j (max) 175 c v f (max) 1 v t rr (max) 40 ns a1 a2 k a1 k a2 d 2 pa k stth2003cgy-tr www.st.com
characteristics STTH2003C-Y 2/7 doc id 022396 rev 1 1 characteristics to evaluate the conduction losses use the following equation: p = 0.75 x i f(av) + 0.025 i f 2 (rms)) table 2. absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 300 v i f(rms) forward current rms 48 a i f(av) average forward current, ? = 0.5 t c = 140 c per diode per device 10 20 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal (t j = 25 c) 110 a t stg storage temperature range -65 to + 175 c t j operating junction temperature range -40 to + 175 c table 3. thermal resistance symbol parameter value (max.) unit r th(j-c) junction to case per diode 2.5 c/w to t a l 1 . 3 table 4. static electrical characteristics (per diode) symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = 300 v 20 a t j = 125 c 30 300 v f (2) forward voltage drop t j = 25 c i f = 10 a 1.25 v t j = 125 c 0.85 1 1. pulse test: t p = 5 ms, ? < 2% 2. pulse test: t p = 380 s, ? < 2%
STTH2003C-Y characteristics doc id 022396 rev 1 3/7 table 5. recovery characteristics symbol parameter test conditions min. typ. max. unit t rr reverse recovery time t j = 25 c i f = 0.5 a, i rr = 0.25 a i r = 1 a 25 ns i f = 1 a, v r = 30 v di f /dt = -50 a/s 40 t fr forward recovery time t j = 25 c i f = 10 a di f /dt = 100 a/s v fr = 1.1 x v fmax 230 ns v fp peak forward voltage t j = 25 c i f = 10 a, di f /dt = 100 a/s 3.5 v i rm reverse recovery current t j = 125 c i f = 10 a, v cc = 200 v di f /dt = 200 a/s 8a s factor softness factor 0.3 - figure 1. conduction losses versus average forward current (per diode) figure 2. forward voltage drop versus forward current (maximum values, per diode) 024681012 0 2 4 6 8 10 12 14 p1(w) t =tp/t tp = 0.05 = 1 i (a) f(av) = 0.1 = 0.2 = 0.5 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 1 10 100 200 i (a) fm v (v) fm t =25c j t =75c j t =125c j figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (90% confidence, per diode) 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 z/r th(j-c) th(j-c) t (s) p single pulse 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12 14 16 i (a) rm di /dt(a/s) f i =2 x i f f(av) i=i f f(av) i =0.5 x i f f(av) v =200v t =125c r j
characteristics STTH2003C-Y 4/7 doc id 022396 rev 1 figure 5. reverse recovery time versus di f /dt (90% confidence, per diode) figure 6. softness factor (tb/ta) versus di f /dt (typical values, per diode) 0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 t (ns) rr di /dt(a/s) f i =2 x i f f(av) i=i f f(av) i =0.5 x i f f(av) v =200v t =125c r j 0 50 100 150 200 250 300 350 400 450 500 0.00 0.10 0.20 0.30 0.40 0.50 0.60 s factor di /dt(a/s) f v =200v t =125c r j figure 7. relative variation of dynamic parameters versus junction temperature (reference: t j = 125 c) figure 8. forward recovery time versus di f /dt (90% confidence, per diode) figure 9. thermal resistance, junction to ambient, versus copper surface under tab figure 10. average forward current versus ambient temperature ( ? = 0.5 ?? per diode) 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 t (c) j s factor i rm 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 t (ns) fr di /dt(a/s) f i=i t =125c f f(av) j v =1.1 x v max. fr f 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 s cu (cm2) r (c/w) th(j-a) printed circuit board fr4, copper thickness: 35 m 0 1 2 3 4 5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175 i (a) f(av) t (c) amb r= r th(j-a) th(j-c)
STTH2003C-Y package information doc id 022396 rev 1 5/7 2 package information epoxy meets ul94, v0 cooling method: by conduction (c) in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 11. footprint (dimensions in mm) table 6. d 2 pak dimensions ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.40 0.393 0.409 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 m 2.40 3.20 0.094 0.126 r 0.40 typ. 0.016 typ. v2 0 8 0 8 g l l3 l2 b b2 e * flat zone no less than 2mm a c2 d r a2 m v2 c a1 * 16.90 10.30 8.90 3.70 5.08 1.30
ordering information STTH2003C-Y 6/7 doc id 022396 rev 1 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode stth2003cgy-tr stth2003cgy d 2 pa k 1.48 g 1000 tape and reel table 8. document revision history date revision changes 24-oct-2012 1 initial release.
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